triethylamine in benzene byproducts: Et3N*HCl; dropwise addn. of mixt. of Si-compd. and Et3N to GeCl4 soln., stirring (24 h, 20°C), heating to 80°C for 30 min (Et3N*HCl removal); distn.; elem. anal.;

in not given heating (60-96 h, 150-200°C);