4'-溴-2'-氟苯乙酮合成路线 （共 13 条）
反应条件
chromium(VI) oxide; sulfuric acid in water; acetone T=0°C; 0.5 h;
参考文献
Wyeth
Patent: US2008/45556 A1, 2008 ;
Location in patent: Page/Page column 32 ;
反应条件
1: in tetrahydrofuran; diethyl ether T=0 - 20°C; 3 h; 2: With ammonium chloride in tetrahydrofuran; diethyl ether; water
参考文献
Takeda Pharmaceutical Company Limited
Patent: EP2455380 A1, 2012 ;
Location in patent: Page/Page column 69; 70 ;
反应条件
in tetrahydrofuran T=-78°C; 1 h;
参考文献
Agouron Pharmaceuticals, Inc.
Patent: US2005/176701 A1, 2005 ;
Location in patent: Page/Page column 179 ;
US 20050176701 A1
反应条件
1: in tetrahydrofuran T=0 - 20°C; 1 h; 2: With sodium hydrogen sulphate; water in tetrahydrofuran; diethyl ether
参考文献
WO2009/151991 A1, ;
Page/Page column 149 ;
WO 2009/151991 A1
反应条件
1: methyl iodide With magnesium in diethyl ether T=20°C; Inert atmosphere; 2: 4-bromo-2-fluoro-N-methoxy-N-methylbenzamide in tetrahydrofuran; diethyl ether T=-20 - 20°C; Inert atmosphere; 3: With water; ammonium chloride in tetrahydrofuran; diethyl ether T=0°C; Cooling with ice bath;
参考文献
US2011/263559 A1, ;
Page/Page column 37 ;
US 20110263559 A1
反应条件
1: (benzotriazo-1-yloxy)tris(dimethylamino)phosphonium hexafluorophosphate; triethylamine / N,N-dimethyl-formamide / 16 h / 0 - 20 °C 2: tetrahydrofuran / 1 h / 0 - 20 °C View Scheme
参考文献
WO2009/151991 A1, ;
WO 2009/151991 A1
反应条件
1: diethyl ether / 12 h / 20 °C / Cooling with ice 2: dipyridinium dichromate / N,N-dimethyl-formamide / 12 h / 20 °C View Scheme
反应条件
1.1: hydrazine hydrate / ethylene glycol / 12 h / 165 °C 2.1: sodium hydride / tetrahydrofuran; paraffin oil (nujol) / 0.17 h / 0 °C 2.2: 12 h / 20 °C View Scheme
参考文献
Rhizen Pharmaceuticals SA; Incozen Therapeutics Pvt. Ltd.
Patent: US2011/118257 A1, 2011 ;
反应条件
bromine; acetic acid in dichloromethane T=0 - 20°C;
参考文献
Wyeth
Patent: US2008/45556 A1, 2008 ;
Location in patent: Page/Page column 32-33 ;
反应条件
hydrazine hydrate in ethylene glycol T=165°C; 12 h;
参考文献
Rhizen Pharmaceuticals SA; Incozen Therapeutics Pvt. Ltd.
Patent: US2011/118257 A1, 2011 ;
Location in patent: Page/Page column 98 ;
