反应条件
in neat (no solvent) placing porous Si (etched in 40 percent HF) in a horizontal, cold-walled reactor; evacuating, 3h; exposing to HCo(CO)4 vapor (1.3 mbar) in vac., -35°C; heating to 100°C, 10 min; evacuating; heating in dynamic vac., 300°C, 10 min; film of 1000Å;
参考文献
Journal of Organometallic Chemistry, , vol. 437, # 1.2 p. C7 - C12
