in neat (no solvent, gas phase) other Radiation; plasma generated under microwaves in apparatus contained needle valves; in dynamic vac. (p(N2)=p(SiCl4)=100 Pa); for 20 h; condensation in cold traps; main products: N(SiCl3)3 and Cl3SiN(SiCl2)2NSiCl3, only small amounts of N2(SiCl3)4; detn. by GC;

in neat (no solvent, gas phase) byproducts: N3Si6Cl15, N2Si6Cl16, N4Si7Cl17; microwave induced plasma in dynamic vac.; trapping in cold trap behind the plasma zone, detected by GC/MS;