2-(氟磺酰基)二氟乙酰基氟化物合成路线 （共 46 条）
反应条件
in carbon disulfide mixing at 0°C for 2 h with AlCl3 , used anhydrous benzene , standing for a night , reflux for 2 h;
参考文献
England,D.C. et al.
Journal of the American Chemical Society, 1960 , vol. 82, p. 6181 - 6188
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Gmelin Handbook: F: PerFHalOrg.2, 1.3.4, page 137 - 166
反应条件
(i) AlCl3, CS2, (ii) /BRN= 969212/; Multistep reaction;
参考文献
England,D.C. et al.
Journal of the American Chemical Society, 1960 , vol. 82, p. 6181 - 6188
反应条件
chloro-trimethyl-silane T=105°C; P=4200.42 Torr; 6 h;
参考文献
Sievert, Allen Capron; Sprague, Lee G.
Patent: US2007/270602 A1, 2007 ;
Location in patent: Page/Page column 4 ;
反应条件
1: T=0 - 100.6°C; P=4350.44 - 5925.59 Torr; 18 h; 2: With chloro-trimethyl-silane T=20 - 107.8°C; Heating / reflux; Product distribution / selectivity;
参考文献
Sievert, Allen Capron; Sprague, Lee G.
Patent: US2007/270602 A1, 2007 ;
Location in patent: Page/Page column 3-4 ;
反应条件
Al2O3 or active carbon 70-90°C or 150-220°C;
参考文献
Gmelin Handbook: F: PerFHalOrg.2, 1.3.4, page 137 - 166
反应条件
hydrogen fluoride T=100°C; 15 h; other fluoride; Mechanism;
参考文献
Hass, Dieter; Holfter, Hagen; Schoenherr, Martin; Zahm, Evelyn
Journal of Fluorine Chemistry, 1992 , vol. 59, # 2 p. 293 - 296
反应条件
1: With cesium fluoride in various solvent(s) T=-15°C; P=750 Torr; 8 h; 2: With sodium carbonate T=210 - 225°C; 4 h;
参考文献
Thomas, Brian H.; Shafer, Gregory; Ma, Jing Ji; Tu, Ming-Hu; DesMarteau, Darryl D.
Journal of Fluorine Chemistry, 2004 , vol. 125, # 8 p. 1231 - 1240
反应条件
NiF2; fluorine T=100°C; other reagent: fluorine, nickel;
参考文献
Zakharov, V. Yu.; Denisov, A. K.; Novikova, M. D.
Russian Journal of Organic Chemistry, 1994 , vol. 30, # 12 p. 1942 - 1945
Zhurnal Organicheskoi Khimii, 1994 , vol. 30, # 12 p. 1844 - 1846
反应条件
fluorine; cesium fluoride in CF2ClCF3 T=-80°C; 3 h;
参考文献
Solvay Solexis S.p.A.
Patent: EP1457484 A1, 2004 ;
Location in patent: Page column 6-7 ;
反应条件
fluorine in 1,1,1,2,2-pentafluoro-2-chlorethyl T=-80°C; 3 h;
参考文献
SOLVAY SOLEXIS S.p.A.
Patent: US2004/199009 A1, 2004 ;
Location in patent: Page 3 ;
