in neat (no solvent) co-depositon laser-ablated Si with D2 at 3.5 K; identified by IR spectroscopy;

Cl2 byproducts: DCl; flow reactor; pressure of about 2 Torr; mixture of Cl2 in helium was passed through a microwave discharge to form halogen atoms; slight excess of silane-d4 was introduced into the flow stream;

Kinetics; React. of SiD4 (pressure (0.6-3.0)E-6 Torr) with (29)Si2D(1+) in the cell (25°C) of a mass spectrometer.; React. monitored by MS, elemental composition verified by MS.;

Kinetics; React. of SiD4 (pressure (0.6-3.0)E-6 Torr) with (29)SiSiD2(1+) in the cell (25°C) of a mass spectrometer.; React. monitored by MS, elemental composition verified by MS.;

in gas Kinetics; Irradiation (UV/VIS);

Kinetics; React. of SiD4 (pressure (0.6-3.0)E-6 Torr) with Si2(1+) in the cell (25°C) of a mass spectrometer.; React. monitored by MS, elemental composition verified by MS.;

Kinetics; React. of SiD4 (pressure (0.6-3.0)E-6 Torr) with Si(1+) (obtained by laser oblation of polycrystalline silicon followed by ionization in the cell (25°C) of a mass spectrometer).; React. monitored by MS, elemental composition verified by MS.;