HCl in neat (no solvent, gas phase)

in pentane under Ar atm. mixt. GaMe3 and GaCl3 in pentane was warmed from -196°C to room temp. and stirred for 12 h; solvent was removed by vac. distillation at room temp., residue was purified by sublimation at room temp.;

in diethyl ether mole ratio Ga(CH3)3*NH3 : HCl = 1 : 3;

in toluene dispersing GaCl3 in toluene at 0°C under dry N2; addn. of siloxane during 1h with stirring; stirring for 12h at ambient temp.; large amount of insol. and unvolatile material;