in diethyl ether; benzene competitive react. of Ge compd. as compared with Me3SiCl; a soln. of Mg compd. in Et2O added dropwise to a mixt. of Ge compd. and Si compd. in C6H6, stirred for 0.5 h at room temp.; decompd. (H2O), the aq. layer treated with Et2O, the combined org. layers evapd. (vac.), the residue analyzed by GLC;
参考文献
Bylikin; Shipov; Kramarova; Artamkina; Negrebetskii; Baukov
Russian Journal of General Chemistry, 2004 , vol. 74, # 9 p. 1356 - 1358
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反应条件
in diethyl ether; benzene competitive react.; a soln. of Mg compd. in Et2O added dropwise to a mixt. of Ge compds. in C6H6, stirred for 0.5 h at room temp.; decompd. (H2O), the aq. layer treated with Et2O, the combined org. layers evapd. (vac.), the residue analyzed by GLC; not isolated;
参考文献
Bylikin; Shipov; Kramarova; Artamkina; Negrebetskii; Baukov
Russian Journal of General Chemistry, 2004 , vol. 74, # 9 p. 1356 - 1358
