1-溴-4-(三甲基硅基)苯合成路线 （共 43 条）
参考文献
Eaborn; Webster
Journal of the Chemical Society, 1957 , p. 4449,4451
反应条件
1: 1) 1.6M BuLi/hexane / 1) ether, 1 h, 10 to 20 deg C, 2) ether, 1 h, RT 2: 66 percent / 100percent HNO3, BF3*CH3CN / acetonitrile / 5 h / Heating View Scheme
参考文献
Frohn, H. J.; Klose, A.; Bardin, V. V.
Journal of Fluorine Chemistry, 1993 , vol. 64, # 3 p. 201 - 216
反应条件
tert.-butyl lithium in tetrahydrofuran; pentane 0.166667 h;
参考文献
Weber, Lothar; Halama, Johannes; Hanke, Kenny; Boehling, Lena; Brockhinke, Andreas; Stammler, Hans-Georg; Neumann, Beate; Fox, Mark A.
Dalton Transactions, 2014 , vol. 43, # 8 p. 3347 - 3363
反应条件
n-butyllithium 1.) THF, hexane, -78 deg C, 1 h, 2.) THF, hexane, a) -78 deg C, 15 min, b) from -78 deg C to RT; Yield given. Multistep reaction;
参考文献
F. HOFFMANN-LA ROCHE AG
Patent: WO2009/77334 A1, 2009 ;
Location in patent: Page/Page column 91 ;
WO 2009/077334 A1
反应条件
1: 1-n-butyl-3-iodobicyclolt;1.1.1gt;pentane With tert.-butyl lithium; zinc(II) chloride in tetrahydrofuran T=25°C; Metallation; 1 h; 2: 4-(trimethylsilyl)bromobenzene With (1,1'-bis(diphenylphosphino)ferrocene)palladium(II) dichloride in tetrahydrofuran T=25°C; Substitution; 24 h; Further stages.;
参考文献
Messner, Matthias; Kozhushkov, Sergei I.; De Meijere, Armin
European Journal of Organic Chemistry, 2000 , # 7 p. 1137 - 1155
反应条件
1: 4-(trimethylsilyl)bromobenzene With n-butyllithium in tetrahydrofuran; hexane; N,N-dimethyl-formamide T=-78 - -70°C; 0.25 h; 2: N,N-dimethyl-formamide in tetrahydrofuran; hexane T=-78 - -68°C; 0.25 h;
参考文献
Conte, Aurelia; Kuehne, Holger; Luebbers, Thomas; Mattei, Patrizio; Maugeais, Cyrille; Mueller, Werner; Pflieger, Philippe
Patent: US2007/185058 A1, 2007 ;
Location in patent: Page/Page column 9 ;
反应条件
1: With n-butyllithium in tetrahydrofuran; hexane T=-78 - -70°C; 0.25 h; 2: With N,N-dimethyl-formamide in tetrahydrofuran; hexane T=-78 - -68°C; 0.25 h;
参考文献
Conte, Aurelia; Kuehne, Holger; Luebbers, Thomas; Mattei, Patrizio; Maugeais, Cyrille; Mueller, Werner; Pflieger, Philippe
Patent: US2007/185182 A1, 2007 ;
Location in patent: Page/Page column 12 ;
反应条件
1: 1.) n-BuLi / 1.) THF, hexane, -78 deg C, 1 h, 2.) THF, hexane, a) -78 deg C, 15 min, b) from -78 deg C to RT 2: 95 percent / iodine monochloride / CCl4 / 1.) RT, 30 min, 2.) reflux, 1 h 3: oxalyl chloride, DMF / toluene / 1 h / Ambient temperature View Scheme
参考文献
Journal of Labelled Compounds and Radiopharmaceuticals, , vol. 34, # 3 p. 213 - 220
反应条件
1: 1.) n-BuLi / 1.) THF, hexane, -78 deg C, 1 h, 2.) THF, hexane, a) -78 deg C, 15 min, b) from -78 deg C to RT 2: 95 percent / iodine monochloride / CCl4 / 1.) RT, 30 min, 2.) reflux, 1 h 3: oxalyl chloride, DMF / toluene / 1 h / Ambient temperature 4: LiCl, NaBH4 / 1,2-dimethoxy-ethane / 1 h View Scheme
参考文献
Ekhato; Huang
Journal of Labelled Compounds and Radiopharmaceuticals, 1994 , vol. 34, # 3 p. 213 - 220
反应条件
1: With n-butyllithium in tetrahydrofuran; hexane T=-78°C; 1.5 h; Inert atmosphere; 2: With boric acid trimethyl ester in tetrahydrofuran; hexane T=-78 - 20°C; 3: With water in tetrahydrofuran; hexane; ethyl acetate
参考文献
DOW ADVANCED DISPLAY MATERIALS, LTD.; YOON, Seung Soo; KIM, Sung Min; KIM, Bong Ok; KWON, Hyuck Joo; EUM, Sung Jin; CHO, Young Jun; LEE, Hyo Jung
Patent: WO2010/140801 A1, 2010 ;
Location in patent: Page/Page column 18 ;
