4,4'-二氨基二苯二硫醚合成路线 （共 62 条）
反应条件
copper(I) sulphide; iron; potassium carbonate; dimethyl sulfoxide T=110°C; 24 h; Inert atmosphere; chemoselective reaction;
参考文献
Wang, Huifeng; Jiang, Linlin; Chen, Tao; Li, Yarning
European Journal of Organic Chemistry, 2010 , # 12 p. 2324 - 2329
反应条件
1: diethyl ether 2: chromium (VI)-oxide; acetic acid View Scheme
参考文献
Murakami; Oae
Yakugaku Zasshi, 1948 , vol. 68, p. 278,281
Chem.Abstr., 1951 , p. 9498
反应条件
in toluene
1 h; Heating;
参考文献
Milanesi, Lilia; Reid, Gavin D.; Beddard, Godfrey S.; Hunter, Christopher A.; Waltho, Jonathan P.
Chemistry - A European Journal, 2004 , vol. 10, # 7 p. 1705 - 1710
反应条件
triethylamine in dichloromethane
T=0 - 20°C;
参考文献
Sengar, Raghvendra S.; Nemykin, Victor N.; Basu, Partha
New Journal of Chemistry, 2003 , vol. 27, # 7 p. 1115 - 1123
反应条件
sodium hydrogensulfite
Behandeln der mit wss. Natronlauge versetzen Loesung mit Acetanhydrid; die Konstitution des Praeparats ist ungewiss; Modifikation vom F: 172grad;
参考文献
Hinsberg
Chemische Berichte, 1906 , vol. 39, p. 2431,2432 Anm.2
反应条件
2: POCl3
3: LiAlH4
View Scheme
参考文献
Benn et al.
Journal of the Chemical Society, 1958 , p. 2800,2804
反应条件
sodium hydroxide; water; sodium hydrogensulfite; isopropyl alcohol
T=20 - 80°C; 8 h;
参考文献
JMC Corporation
Patent: WO2007/66845 A1, 2007 ;
Location in patent: Page/Page column 8-9 ;
反应条件
1: 90 percent / Et3N / CH2Cl2 / 4 h / 0 °C
2: 73 percent / NaBH4 / ethanol; tetrahydrofuran / 4 h / 20 °C
View Scheme
参考文献
Sengar, Raghvendra S.; Nemykin, Victor N.; Basu, Partha
New Journal of Chemistry, 2003 , vol. 27, # 7 p. 1115 - 1123
反应条件
sulfuric acid; iodine; sodium iodide; sodium nitrite
1.) H2O, 0 deg C, 15 min; 2.) H2O, CH2Cl2, r.t., overnight; Yield given. Multistep reaction;
参考文献
Wang, Z. Y.; Bonanno, G.; Hay, A. S.
Journal of Organic Chemistry, 1992 , vol. 57, # 9 p. 2751 - 2753
反应条件
sodium cyanoborohydride; zinc(II) chloride in methanol; water
T=0 - 20°C; 2 h;
参考文献
QUEEN MARY and WESTFIELD COLLEGE; UNIVERSITY COLLEGE LONDON; BARTS AND THE LONDON NHS TRUST
Patent: WO2004/46094 A1, 2004 ;
Location in patent: Page 48 ;
