HBr under inert gas at 25°C for 12 h with 1:1 GaR3:HBr; recrystn. from benzene;

HCl in benzene HCl added in three equimolar portions by vac. distn. at -196°C, after each addn. mixt. warmed to room temp. and stirred for 1 h; volatile products fractionally distd., nonvolatile products extd. with n-pentane, insol. component collected, identified as Ga(CH2SiMe3)2Cl (elem. anal.), sol. fraction mixt. of Ga(CH2SiMe3)Cl2 and Ga(CH2SiMe3)3;

HCl under inert gas at 25°C for 12 h with 1:2 GaR3:HCl; vac. sublimation at 50°C; elem. anal.;

in benzene under N2 or Ar mixt. in stoich. quantity stirred at room temp. for 2 h; volatile components removed by vac. distn., crude product sublimed at 32°C; elem. anal.;

in benzene The mixt. of reagents in benzene was heated at 160-165°C for 3 weeks in a sealed tube;; not sepd., detected by NMR 13P spectra;;

in diethyl ether under Ar Grignard reagent added dropwise to GaCl3-ether soln. over a period of 1 h, mixt. stirred for 24 h at room temp.; Et2O removed by vac. distn., product distd. from reaction mixt. at 120°C under high vac.; elem. anal.;

CO2 in pentane byproducts: potassium formate; under N2, Ga-compd. and excess of CO2 (molar ratio 1:2) combined, pentane added by vac. distn., warmed to room temp., stirred overnight; filtered, solvent distd. from filtrate at room temp., liq. distd. at 110°C; identified by (1)H NMR spectra;

in pentane byproducts: LiBr; (Ar), dropwise addn. of Li-comp. to boiled soln. of GaBr3, ratio of educts = 1:3, refluxed for 2.5 h; filtered, fractionated destillation;

in diethyl ether; pentane byproducts: Ga, C4H8O2, LiBr; (Ar), added at -60°C, warmed up to room temperature over 1 h, stirred 5 min; filtered, washed with toluene, fractionated destillation;

in benzene byproducts: H2, Si(CH3)4, KBr; Ga(CH2Si(CH3)3)2Br soln. added to KGa(CH2Si(CH3)3)2H2 soln. at room temp., stirred for 24 h, cooled to -196°C; fractionally distd., filtered, vacuum distd. at 110°C;