in gaseous matrix high-temperature alumina furnice (1240°C, 1E-7 bar), Ar matrix (dilution 200:1), condensation on copper block (15 K, 30 min); IR-monitoring;

in gaseous matrix high-temperature alumina furnice (1240°C, 1E-7 bar), Ar matrix (dilution 200:1), condensation on copper block (15 K, 30 min); IR-monitoring;

in neat (no solvent) byproducts: SO2, HCl, SO2Cl2; heating of SiHCl3 and SO3 (1:2) in a bomb tube at 160 °C for a period of 12 hours;;

in gaseous matrix Irradiation (UV/VIS); high-temperature alumina furnice (1240°C, 1E-7 bar), SiCl4/O2 ratio 1:1, Ar matrix (dilution 200:1), condensation on copper block (15 K, 30 min), irradiation (254 nm, 10 min), further product; IR-monitoring;