oxygen in neat (no solvent) Ru films prepared by metallorganic chemical vapor deposition process, films deposited on SiO2, Si3N4, TiN, TiO2, Ta2O5 substrate layers at 300-350 °C; source temp. 85 °C, Ar flow rate 100 sccm, O2 flow rate 100-200 sccm, pressure 3 Torr;
参考文献
Journal of the Electrochemical Society, , vol. 152, # 1 p. C15-C19
oxygen in further solvent(s) liquid injection of Ru precursor (ethylcyclohexane); O2 as reactant; Ar as carrier gas; Si(100) as substrate; 230-280°C; X-ray fluorescence spectroscopy; XRD; AES;;
参考文献
Journal of the Electrochemical Society, , vol. 154, # 2 p. D95-D101
sodium tetrahydroborate in water aq. soln. of NaCH3COO added to aq. soln. of RuCl3; aq. soln. of NaBH4 added dropwise under vigorous stirring; molar ratio NaBH4/RuCl3 greater than 5;
参考文献
Journal of Alloys and Compounds, , vol. 404-406, # SPEC. ISS. p. 728 - 731
hydrogenchloride in not given react. on heating with HCl soln.; evolution of H2 and pptn. of Ru; pptn. of (RuCl2H2O(NH3)3)Cl from the formed dark blue soln.;;
参考文献
J. Chem. Soc. (London) A, , p. 1477 - 1482
Intern. Conf. Coord. Chem., London 1959, Lectures Abstr., S. 135/136
