in gas byproducts: ethane, ethene; Irradiation (UV/VIS); laser-induced photolytic chemical vapour deposition (LPCVD) of (C2H5)GeH3 (2.5 kPa) at 193 nm and deposition of Ge on a reactor NaCl window;; IR and energy-dispersive X-ray spectroscopy; further byproducts;;
参考文献
Journal of the Chemical Society, Faraday Transactions, , vol. 88, # 12 p. 1637 - 1642
in gas byproducts: ethane, n-butane, ethene; Irradiation (UV/VIS); laser-induced photolytic chemical vapour deposition (LPCVD) of (C2H5)3GeH (1.6 kPa) at 193 nm and deposition of Ge on a reactor NaCl window;; IR and energy-dispersive X-ray spectroscopy;;
参考文献
Journal of the Chemical Society, Faraday Transactions, , vol. 88, # 12 p. 1637 - 1642
in gas byproducts: ethane, n-butane, ethene; Irradiation (UV/VIS); laser-induced photolytic chemical vapour deposition (LPCVD) of (C2H5)4Ge (0.3 kPa) at 193 nm and deposition of Ge on a reactor NaCl window;; IR and energy-dispersive X-ray spectroscopy;;
参考文献
Journal of the Chemical Society, Faraday Transactions, , vol. 88, # 12 p. 1637 - 1642
in neat (no solvent) slow heating; beginning of the decompn. at 140 °C; formation of GeCl2 and HCl by vigorous decompn. at 175 °C; further heating generates Ge and GeCl4;;
参考文献
Journal of Physical Chemistry, , vol. 31, p. 1537 - 1537
