in neat (no solvent) byproducts: H2O; react. with an excess of O (O2 activated by glow discharge with min. 20percent atomic O and max. 0.5percent O3 at 1 Torr);; quant. react. under formation of H2O, SO2, SO3, H2SO4 and deposition of S by lightening;;
参考文献
Zeitschrift fuer Elektrochemie, , vol. 36, p. 714 - 716
in gaseous matrix byproducts: HO2, O3; addn. of SO2, O2 and Ar to OH-radicals (discharge-flow system), total press. 2-5 Torr, temp. 300 K; not isolated, deposition of products onto a CsI window, identification by IR;
参考文献
Kuo, Yu-Ping; Cheng, Bing-Ming; Lee, Yuan-Pern
Chemical Physics Letters, 1991 , vol. 177, p. 195 - 199
