N-甲基-N-(三甲基硅基)乙酰胺合成路线 （共 33 条）
反应条件
triethylamine in hexane T=30°C; 1 h; Industry scale;
参考文献
SOLVAY SA; CALLENS, Roland; COLLIN, Andre
Patent: WO2012/136617 A1, 2012 ;
Location in patent: Page/Page column 12 ;
反应条件
T=180 - 200°C; P=180 Torr;
参考文献
Journal of Organometallic Chemistry, , vol. 17, p. 241 - 262
反应条件
T=180 - 200°C; P=8 Torr;
参考文献
Journal of Organometallic Chemistry, , vol. 17, p. 241 - 262
反应条件
1: Et3N / diethyl ether 3: 180 - 200 °C / 8 Torr View Scheme
参考文献
Journal of Organometallic Chemistry, , vol. 17, p. 241 - 262
反应条件
triethylamine in diethyl ether 12 h;
参考文献
Tetrahedron Letters, , vol. 33, # 40 p. 5913 - 5916
反应条件
2: 180 - 200 °C / 8 Torr View Scheme
参考文献
Journal of Organometallic Chemistry, , vol. 17, p. 241 - 262
反应条件
1: 170 - 180 °C 2: 180 - 200 °C / 180 Torr View Scheme
参考文献
Journal of Organometallic Chemistry, , vol. 17, p. 241 - 262
反应条件
sodium hydride in N,N-dimethyl-formamide T=15 - 20°C; Product distribution; Further Variations:Solvents;
参考文献
Tanabe, Yoo; Misaki, Tomonori; Kurihara, Minoru; Iida, Akira; Nishii, Yoshinori
Chemical Communications, 2002 , # 15 p. 1628 - 1629
反应条件
in diethyl ether 1 h; -78 deg C to r.t.;
参考文献
Esker, John L.; Newcomb, Martin
Journal of Organic Chemistry, 1994 , vol. 59, # 10 p. 2779 - 2786
反应条件
chloro-trimethyl-silane T=25°C; 2 h;
参考文献
Phosphorus, Sulfur and Silicon and the Related Elements, , vol. 68, # 1-4 p. 25 - 36
