water in gaseous matrix film formation by atomic layer deposition from AlMe3/H2O vapor/Ar on Si,SiO2/Si and TiN/SiO2/Si substrates at 370°C (chamber temp. 150.d egree.C) for 1 and 14 s; RBS, XRD;
in neat (no solvent) deposited by atomic layer deposition at 300°C, nitrogen employed as a carrier and purge gas, rapid thermal annealing conducted in either 10 Torr of N2 or in a high vacuum between 800 and 1000 °C for 20 s;
in gas Al(CH3) injected into ALD reactor with 50 sccm Ar carrier flow rate and O3 flow rate of 600 sccm; deposited on Si(100) wafers at pulse and purgetimes for 40, 60, 70 and 100 ALD cycles at suspector temp. of 320.degre e.C at pressures 200-1000 mTorr;
参考文献
Liu, Han; Ye, Peide D.
Applied Physics Letters, 2011 , vol. 99, # 5 art. no. 052108
in neat (no solvent) Al2O3 produced by alternating exposure of (CH3)3Al and (2)H2O; N2 carrier gas used and atmospheric pressure;
参考文献
Frank, Martin M.; Wang, Yu; Ho, Ming-Tsung; Brewer, Rhett T.; Moumen, Naim; Chabal, Yves J.
Journal of the Electrochemical Society, 2007 , vol. 154, # 2 p. G44-G48
