2,3,3,3-四氟丙烯合成路线 （共 125 条）
反应条件
hydrogen fluoride; fluorinated Cr2O3 catalyst
T=350°C;
参考文献
Honeywell International Inc.
Patent: EP2154122 A1, 2010 ;
Location in patent: Page/Page column 3 ;
反应条件
1: With zinc in N,N-dimethyl-formamide
T=-15 - 60°C; 6 h;
2: With acetic anhydride; zinc in N,N-dimethyl-formamide
T=20 - 50°C; 6 h;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: US2009/143604 A1, 2009 ;
Location in patent: Page/Page column 5/1 ;
反应条件
methane; oxygen; nickel
T=675°C; P=1277.21 Torr; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: US2006/217577 A1, 2006 ;
Location in patent: Page/Page column 3; 4 ;
反应条件
hydrogen fluoride; 50 wt SbCl5/C; carbon
T=70 - 600°C; P=760.051 - 5931.67 Torr; Gas phase; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: WO2009/26526 A1, 2009 ;
Location in patent: Page/Page column 16-18 ;
反应条件
hydrogen fluoride; activated by HF zinc/chromia catalyst
T=100 - 340°C; Inert atmosphere;
参考文献
INEOS FLUOR HOLDINGS LIIMITED
Patent: WO2009/125201 A2, 2009 ;
Location in patent: Page/Page column 28; 29 ;
反应条件
1: With titanium tetrachloride
T=35°C; 0.666667 h; Inert atmosphere;
2: With zinc in diethylene glycol dimethyl ether
T=85°C; 3 h; Cooling with ice;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY; STEPANOV, Andrei, Aleksandrovich; CHERSTKOV, Victor, Filippovich; NAPPA, Mario, Joseph
Patent: WO2011/90734 A1, 2011 ;
Location in patent: Page/Page column 7 ;
反应条件
hydrogen fluoride
T=350°C; P=750.075 Torr; 50 h; Inert atmosphereIndustrial scale; Concentration;
参考文献
DAIKIN INDUSTRIES, LTD.; TAKAHASHI, Kazuhiro; MOTOYAMA, Hitoshi; CHAKI, Takehiro; KARUBE, Daisuke; KISHIMOTO, Masayuki
Patent: WO2014/25065 A1, 2014 ;
Location in patent: Page/Page column 20-22 ;
反应条件
hydrogen; potassium acetate; palladium 10 on activated carbon in ethanol
T=40 - 45°C; P=7757.43 Torr; 16 h; Product distribution / selectivity;
参考文献
Honeywell International Inc.
Patent: US2008/27251 A1, 2008 ;
Location in patent: Page/Page column 3-4 ;
反应条件
1: T=50 - 60°C; P=925.543 - 5931.67 Torr;
2: With potassium hydroxide in water
T=50°C; Product distribution / selectivity;
参考文献
Honeywell International Inc.
Patent: US2006/258891 A1, 2006 ;
Location in patent: Page/Page column 3-4 ;
反应条件
sulfated zirconia
T=450°C; P=760.051 Torr; 1 h; Inert atmosphere of nitrogen;
参考文献
DAIKIN INDUSTRIES, LTD.
Patent: WO2009/148191 A1, 2009 ;
Location in patent: Page/Page column 11-12 ;
