2,3,3,3-四氟丙烯合成路线 （共 125 条）
反应条件
1: With nickel
T=650°C; 0.000555556 h;
2: With hydrogen fluoride
T=325°C; 0.00138889 h; Product distribution / selectivity;
参考文献
Van Der Puy, Michael
Patent: US2009/253946 A1, 2009 ;
Location in patent: Page/Page column 2 ;
反应条件
water; NAF
T=632°C; 0.00555556 h; Conversion of starting material;
参考文献
DAIKIN INDUSTRIES, LTD.; KOMATSU, Yuzo; SUGIYAMA, Akinari; SHIBANUMA, Takashi
Patent: WO2010/1768 A1, 2010 ;
Location in patent: Page/Page column 8-10 ;
反应条件
water
T=498°C; 0.00555556 h; Conversion of starting material;
参考文献
DAIKIN INDUSTRIES, LTD.; KOMATSU, Yuzo; SUGIYAMA, Akinari; SHIBANUMA, Takashi
Patent: WO2010/1768 A1, 2010 ;
Location in patent: Page/Page column 9-10 ;
反应条件
5.3percent Cr, 6.4percent Ni on AlF3
T=377°C; P=760.051 Torr; Gas phaseIndustry scale; Product distribution / selectivity;
参考文献
ARKEMA FRANCE
Patent: US2011/15452 A1, 2011 ;
Location in patent: Page/Page column 4 ;
反应条件
hydrogen fluoride; chlorine
T=140°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0104; 0105 ;
反应条件
hydrogen fluoride; chlorine
T=300°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0104; 0105 ;
反应条件
hydrogen fluoride; hydrogen
T=275 - 300°C; P=760.051 Torr; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 14 ;
反应条件
hydrogen; acid treated activated carbon
T=350 - 500°C; Gas phase; Product distribution / selectivity;
参考文献
Honeywell International Inc.
Patent: US2008/27251 A1, 2008 ;
Location in patent: Page/Page column 4 ;
反应条件
hydrogen; 0.5percent Pd/Al2O3 fluorinated by HF
T=200°C; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/79265 A1, 2008 ;
Location in patent: Page/Page column 17-18 ;
反应条件
1: With nickel
T=650 - 725°C; 0.000555556 h;
2: With hydrogen fluoride
T=315 - 335°C; 0.00138889 h; Product distribution / selectivity;
参考文献
Van Der Puy, Michael
Patent: US2009/253946 A1, 2009 ;
Location in patent: Page/Page column 2 ;
