3-氨基-5-羟基苯甲酸合成路线 （共 12 条）
反应条件
hydrogen; palladium on activated charcoal in ethanol P=760 Torr; 0.25 h;
参考文献
Herlt, Anthony J.; Kibby, Jeffrey J.; Rickards, Rodney W.
Australian Journal of Chemistry, 1981 , vol. 34, # 6 p. 1319 - 1324
反应条件
Tris buffer T=28°C; 10 h; cell-free extract of N. mediterranei;
参考文献
Kim; Kirschning; Bergon; Ahn; Wang; Shibuya; Floss
Journal of the American Chemical Society, 1992 , vol. 114, # 12 p. 4941 - 4943
反应条件
1: 1.) NH4Cl, NH4OH, 2.) 6N HCl / 1.) 180 deg C, 40 h, under pressure, 2.) reflux, 16 h 2: 96 percent / 2N NaOH / H2O View Scheme
参考文献
Tetrahedron, , vol. 39, # 24 p. 4189 - 4192
反应条件
sodium hydroxide in water
参考文献
Becker; Rickards
Tetrahedron, 1983 , vol. 39, # 24 p. 4189 - 4192
反应条件
A. mediterranei cell-free extract (DAHP synthase activity) T=28°C; pH=7.3; 6 h;
参考文献
Journal of the American Chemical Society, , vol. 124, # 36 p. 10642 - 10643
反应条件
1: 63 percent / MeOLi / 4 h / Heating 2: 79 percent / 48percent aq. HBr, AcOH / 22 h / Heating 3: 100 percent / H2 / 10percent Pd/C / ethanol / 0.25 h / 760 Torr View Scheme
参考文献
Australian Journal of Chemistry, , vol. 34, # 6 p. 1319 - 1324
反应条件
1: 79 percent / 48percent aq. HBr, AcOH / 22 h / Heating 2: 100 percent / H2 / 10percent Pd/C / ethanol / 0.25 h / 760 Torr View Scheme
参考文献
Australian Journal of Chemistry, , vol. 34, # 6 p. 1319 - 1324
反应条件
1.1: sulfuric acid; sodium nitrite / water / 0 °C 1.2: 0.03 h / 20 °C 2.1: FAS; ammonia / water / 0.17 h / 120 °C View Scheme
参考文献
Chemistry - A European Journal, , vol. 17, # 2 p. 613 - 619
反应条件
1.1: iron; acetic acid 2.1: sulfuric acid; sodium nitrite / water / 0 °C 2.2: 0.03 h / 20 °C 3.1: FAS; ammonia / water / 0.17 h / 120 °C View Scheme
参考文献
Chemistry - A European Journal, , vol. 17, # 2 p. 613 - 619
反应条件
1: With sodium carbonate in tetrahydrofuran; water T=20°C; 20 h; 2: With hydrogenchloride in tetrahydrofuran; diethyl ether; water
参考文献
Betschart, Claudia; Lerchner, Andreas; Machauer, Rainer; Rueger, Heinrich; Tintelnot-Blomley, Marina; Veenstra, Siem Jacob
Patent: US2008/132477 A1, 2008 ;
Location in patent: Page/Page column 38 ;
