Si or SiO2 in solid matrix Irradiation (UV/VIS); UV laser photolysis of absorbed Al compd. (Si or SiO2 substrate) at 308 nm; detected by time-of-flight MAS;

in gas byproducts: C2H6, CH3; Irradiation (UV/VIS); photolysis (190-310 nm); studied by laser mass spectrometry and UV absorption spectrometry;