β-Ga2O3; gallium in solid the react. mixt. of B and Ga2O3 with the molar ratio of 6:1 was thoroughly mixed and then put into an evapn. area with the temp. 1550°C to form the B2O2 vap. and Ga which were transported to deposition area at1100°C with NH3 flow; transmission electron microscopy studies;
参考文献
Jang, Woo Sung; Bae, Seung Yong; Park, Jeunghee; Ahn, Jae-Pyoung
Solid State Communications, 2005 , vol. 133, # 3 p. 139 - 143
hydrogen in gas chemical vapor deposition on sapphire or silicon substrate (H2 carrier gas, flow rates BEt3/NH3/H2 0-2.8/15-250/48-120 ml/min, total 60-300 ml/min, growth temp. 750-1200°C); electron probe X-ray microanal.;
iron in neat (no solvent) ball milling of B under 300 kPa NH3 with 300 rpm for 50 h; Fe particles (1.5 atpercent) produced from the steel balls; annealed at 1100°C in q uartz tube furnace under N2 flow for 15 h; detn. by XRD and TEM;
ferro-boron; iron Fe, .alpha. in neat (no solvent) B powder milled at room temp. for 150 h; annealed at 1200°C for 6h; the milling atm. was ammonia gas at pressure of 300 kPa; annealed in a tube furnace in N2 gas; monitored by NMR spectroscopy and powder X-ray diffraction;
参考文献
Lee, Chang Hoon; Park, Seong-Hun; Jung, Jae Kap; Ryu, Kwon-Sang; Nahm, Seung Hoon; Kim, Joon; Chen, Ying
Solid State Communications, 2005 , vol. 134, # 6 p. 419 - 423
in gas Kinetics; chem. vapour deposition on graphite matrix from mixt. BCl3, NH3 and N2; 1300-2100°C; 1 h; growth-rate and structure depending on react. mixt. compn. and total pressure (130-2600 Pa);
参考文献
Rozenberg; Sinenko; Chukanov
Journal of Materials Science, 1993 , vol. 28, # 20 p. 5675 - 5678
chemical vapour infiltration conditions; temperature range: 673-1173 K; total pressure: 0.13-13.3 kPa; total flow rate: 10E-6-21E-6 kg/s; time: 2-5 h;;
参考文献
Matsuda, Toshitsugu; Nakae, Hiroyuki; Hirai, Toshio
Journal of Materials Science, 1988 , vol. 23, p. 509 - 514
in neat (no solvent) mixt. of MgO and B heated in BN crucible to 1700°C, Mg vapor and B2O2 transported with Ar gas and meet with NH3, heated for 2 h; BN nanohorn obtained;
