三正丁基(三甲基甲硅烷基甲基)锡合成路线 (共 13 条)
反应条件
n-butyllithium in diethyl ether; hexane treatment of BuLi in hexane with teluride in THF (-78°C), addn. of Me3SiCl, warming to room temp. (mixing, over period of 1 h); not isolated; NMR spectroscopy;
参考文献
Hiiro, Tomoki; Atarashi, Yasunori; Kambe, Nobuaki; Fujiwara, Shin-Ichi; Ogawa, Akiya; et al.
Organometallics, 1990 , vol. 9, p. 1355 - 1357
反应条件
iodine; ammonium chloride in diethyl ether N2-atmosphere; addn. of Me3SiCH2Cl to Mg (activated with I2), refluxing(1 h), addn. of Bu3SnCl, refluxing (18 h); addn. of satd. aq. NH4Cl, extn. of aq. layer (ether), washing of org. layer (satd. aq. NaCl), drying (Na2SO4), evapn. of ether, distn. (vac.);
参考文献
Ager, David J.; Cooke, Glen E.; East, Michael B.; Mole, Susan J.; Rampersaud, Ashraff; Webb, Victoria J.
Organometallics, 1986 , vol. 5, p. 1906 - 1908
反应条件
in benzene-d6 (N2); to soln. of scandium complex in C6D6 was added nBu3SnCl, allowed for 17 h; detected by NMR;
参考文献
Journal of the American Chemical Society, , vol. 133, # 30 p. 11744 - 11756
反应条件
n-butyllithium in tetrahydrofuran; hexane soln. of Si-compd. in dry THF cooled to 0°C then n-BuLi in hexane added to this soln. under N2, after 30 min reaction mixt. cooled to -78°C, and added to Ph3SnCl in dry THF, warmed to ambient temp., stirred for 2 h, quenched with aq.NH4Cl; extd. with ether, washed with satd. aq. NaCl soln., dried (Na2SO4), concd. in vac., triturated with hexane for removing of Ph4Sn, hexane soluble material chromd. (silicagel, hexane/CH2Cl2), elem. anal.;
参考文献
Synthetic Communications, , vol. 11, p. 673 - 680
反应条件
n-butyllithium in tetrahydrofuran; hexane soln. of Si-compd. in dry THF cooled to 0°C then n-BuLi in hexane added to this soln. under N2, after 30 min reaction mixt. cooled to -78°C, soln. of Ph3SnCl in THF added, warmed to ambient temp., stirred for 2 h, quenched with aq. NH4Cl; extd. with chlorofom, washed with satd. aq. NaCl soln., dried (Na2SO4),concd. in vac., recrystd. of residue gave Ph4Sn, hexane soluble material chromd. (silicagel, hexane/CH2Cl2), elem. anal.;
参考文献
Synthetic Communications, , vol. 11, p. 673 - 680
反应条件
n-butyllithium in tetrahydrofuran; hexane soln. of Si-compd. in dry THF cooled to 0°C then n-BuLi in hexane added to this soln. under N2, after 30 min reaction mixt. cooled to -78°C, soln. of Ph3SnCl in THF added, warmed to ambient temp., stirred for 2 h, quenched with aq. NH4Cl; extd. with chlorofom, washed with satd. aq. NaCl soln., dried (Na2SO4),concd. in vac., recrystd. of residue gave Ph4Sn, hexane soluble material chromd. (silicagel, hexane/CH2Cl2), elem. anal.;
参考文献
Synthetic Communications, , vol. 11, p. 673 - 680
反应条件
n-butyllithium Yield given. Multistep reaction;
参考文献
Seitz, David E.; Zapata, Antonio
Tetrahedron Letters, 1980 , vol. 21, p. 3451 - 3454
反应条件
n-butyllithium Direct methylenation of ketones; Product distribution;
参考文献
Seitz, David E.; Zapata, Antonio
Tetrahedron Letters, 1980 , vol. 21, p. 3451 - 3454
反应条件
n-butyllithium Yield given. Multistep reaction;
参考文献
Seitz, David E.; Zapata, Antonio
Tetrahedron Letters, 1980 , vol. 21, p. 3451 - 3454
反应条件
n-butyllithium Direct methylenation of aldehydes.; Product distribution;
参考文献
Seitz, David E.; Zapata, Antonio
Tetrahedron Letters, 1980 , vol. 21, p. 3451 - 3454