in gaseous matrix r. f. thermal plasma chemical vapour deposition (Ar carrier gas, Mo or Si substrate, substrate temp. 430-1100°C, deposition time 5 -10 min); secondary electron microscopy, X-ray diffraction;
参考文献
Matsumoto; Nishida; Akashi; Sugai
Journal of Materials Science, 1996 , vol. 31, # 3 p. 713 - 720
in gaseous matrix r. f. thermal plasma chemical vapour deposition (Ar carrier gas, Mo or Si substrate, substrate temp. 430-1100°C, deposition time 5 -10 min); secondary electron microscopy, X-ray diffraction;
参考文献
Matsumoto; Nishida; Akashi; Sugai
Journal of Materials Science, 1996 , vol. 31, # 3 p. 713 - 720
in gaseous matrix r. f. thermal plasma chemical vapour deposition (Ar carrier gas, Mo or Si substrate, substrate temp. 430-1100°C, deposition time 5 -10 min); secondary electron microscopy, X-ray diffraction;
参考文献
Matsumoto; Nishida; Akashi; Sugai
Journal of Materials Science, 1996 , vol. 31, # 3 p. 713 - 720
in solid matrix Irradiation (UV/VIS); reaction of zirconium laser ablated atoms with nitrogen trifluoride in Ar with condensation at 8 K for 60 min, irradiation at >290 mn for 15 min, irradiation at >220 nm for 15 min; IR monitoring;
参考文献
Wang, Xuefeng; Lyon, Jonathan T.; Andrews, Lester
Inorganic Chemistry, 2009 , vol. 48, # 13 p. 6297 - 6302
in solid matrix Irradiation (UV/VIS); reaction of titanium ablated atoms with nitrogen trifluoride in Ar with condensation at 8 K for 60 min, irradiation at >220 mn for 20 min, annealing to 30 K; IR monitoring;
参考文献
Wang, Xuefeng; Lyon, Jonathan T.; Andrews, Lester
Inorganic Chemistry, 2009 , vol. 48, # 13 p. 6297 - 6302
