in neat (no solvent) using a fixed-bed reaction system directly connected to GC-TCD; placing of Mg3(VO4)2 in quartz reactor; injecting of CCl4; heating at 723 K; monitoring by XRD and GC-TCD;
参考文献
Bulletin of the Chemical Society of Japan, , vol. 78, # 8 p. 1565 - 1574
in gas reactor temp.: 250 - 500°C, passing SiCl4 over Mg2Si with N2 as carrier gas, condensing exit gases with liq. N2 traps; detn. by gas chromy., cooling reator tube to room temp., deposition of Si;
参考文献
Indian Journal of Chemistry, Section A: Inorganic, Physical, Theoretical & Analytical, , vol. 27, # 9 p. 756 - 758
700-1000°C; diluterd with N2; washing with HCl at 1000°C;
参考文献
Gmelin Handbook: B: B-Verb.1, 1.1.1.1.3, page 4 - 5
Full Text Show Details
Cueilleron, J.; Thevenot, F.
Bulletin de la Societe Chimique de France, 1966 , p. 2763 - 2764
