1-氨基-2-乙烯基-环丙羧酸乙酯合成路线 （共 9 条）
反应条件
in tert-butyl methyl ether T=20°C; 100 h; Heating / reflux;
参考文献
Bristol-Myers Squibb Company
Patent: US2008/107625 A1, 2008 ;
Location in patent: Page/Page column 20 ;
反应条件
T=20°C; Heating / reflux;
参考文献
US2008/107624 A1, ;
Page/Page column 20 ;
反应条件
1: With lithium tert-butylate in toluene
T=20°C; 1 h;
2: With hydrogenchloride in tert-butyl methyl ether; water; toluene
T=20°C; 2 h;
3: With sodium hydroxide in tert-butyl methyl ether; water; toluene
T=0°C; pH=14;
参考文献
Bristol-Myers Squibb Company
Patent: US2009/274652 A1, 2009 ;
Location in patent: Page/Page column 23 ;
US 20090274652 A1
反应条件
hydrogenchloride in diethyl ether; water
T=20°C; 3.5 h;
参考文献
Bristol-Myers Squibb Company
Patent: US2008/14173 A1, 2008 ;
Location in patent: Page/Page column 21-22 ;
US 20080014173 A1
反应条件
1: With hydrogenchloride; water in tert-butyl methyl ether
T=20°C; 2 h;
2: With sodium hydroxide in tert-butyl methyl ether; water
pH=14;
参考文献
Sin, Ny; Good, Andrew Charles; Venables, Brian Lee; Scola, Paul Michael; Meanwell, Nicholas A.
Patent: US2006/183694 A1, 2006 ;
Location in patent: Page/Page column 35-36 ;
US 20060183694 A1
反应条件
1: With lithium tert-butylate in toluene
1 h;
2: With water in tert-butyl methyl ether; toluene
3: With hydrogenchloride in tert-butyl methyl ether; water
T=20°C; 2 h;
参考文献
BRISTOL-MYERS SQUIBB COMPANY
Patent: WO2005/51410 A1, 2005 ;
Location in patent: Page/Page column 60-61 ;
反应条件
sodium hydroxide
pH=14;
参考文献
Bristol-Myers Squibb Company
Patent: US2008/107625 A1, 2008 ;
Location in patent: Page/Page column 20 ;
反应条件
1: phosphoric acid / tert-butyl methyl ether; methanol / 2 h / 20 °C
2: sodium hydroxide / water / 35 °C / pH 8.15 / Resolution of racemate; Enzymatic reaction
View Scheme
参考文献
DR. REDDY'S LABORATORIES LTD.; DR. REDDY'S LABORATORIES, INC.; TAYLOR, Ian N.; LLOYD, Michael C.; HESELTINE, Adrian
Patent: WO2011/3063 A2, 2011 ;
反应条件
hydrogenchloride in 1,4-dioxane
Product distribution / selectivity;
参考文献
Bristol-Myers Squibb Company
Patent: US2008/14173 A1, 2008 ;
Location in patent: Page/Page column 21-22 ;
US 20080014173 A1
