氯化(1-丁基-3-甲基咪唑)合成路线 （共 53 条）
反应条件
1: 1-n-butyl-3-methylimidazolium chloride With potassium hydroxide in tetrahydrofuran Sonication; 2: NH4MeSO3 in water T=20°C;
参考文献
Peng, Yanqing; Li, Guiyun; Li, Jianguo; Yu, Shaojun
Tetrahedron Letters, 2009 , vol. 50, # 29 p. 4286 - 4288
反应条件
in dichloromethane T=20°C; 48 h;
参考文献
Journal of Inclusion Phenomena and Macrocyclic Chemistry, , vol. 66, # 3 p. 223 - 230
反应条件
in methanol 72 h; Darkness;
参考文献
Chemical Communications, , vol. 48, # 36 p. 4311 - 4313
反应条件
Amberlyst A-26 (PF6- form) in methanol
参考文献
Alcalde, Ermitas; Dinares, Immaculada; Ibanez, Anna; Mesquida, Neus
Molecules, 2012 , vol. 17, # 4 p. 4007 - 4027
反应条件
1: potassium fluoride; N-trimethylsilyl-tris(pentafluorethyl)phosphazen; boric acid trimethyl ester in ethylene glycol dimethyl ether T=20 - 60°C; 1 h; 2: hydrogen fluoride in ethylene glycol dimethyl ether; water T=0 - 20°C; 3 h; 3: 1-n-butyl-3-methylimidazolium chloride in water
参考文献
WO2005/105815 A1, ;
Page/Page column 15-17 ;
反应条件
in water T=20°C; 24 h;
参考文献
Myung, Sung; Yin, Perry T.; Kim, Cheoljin; Park, Jaesung; Solanki, Aniruddh; Reyes, Pavel Ivanoff; Lu, Yicheng; Kim, Kwang S.; Lee, Ki-Bum
Advanced Materials, 2012 , vol. 24, # 45 p. 6081 - 6087
参考文献
Porras Gutierrez, Ana Gabriela; Zeitouny, Joceline; Gomila, Antoine; Douziech, Benedicte; Cosquer, Nathalie; Conan, Francoise; Reinaud, Olivia; Hapiot, Philippe; Le Mest, Yves; Lagrost, Corinne; Le Poul, Nicolas
Dalton Transactions, 2014 , vol. 43, # 17 p. 6436 - 6445
反应条件
triethylsulfonium tetrafluoroborate in dichloromethane T=60 - 70°C; 672 h; Product distribution / selectivity;
参考文献
MERCK PATENT GMBH
Patent: WO2006/7912 A1, 2006 ;
Location in patent: Page/Page column 19-20 ;
反应条件
in acetone react. of equal moles of (C3H3N2CH3C4H9)Cl with NaBF4 in acetone; stirring at room temp. for 24 h; filtering and vac. drying overnight at 50°C; detd. by NMR;
参考文献
Xiao, Li; Johnson, Keith E.
Journal of the Electrochemical Society, 2003 , vol. 150, # 6 p. E307-E311
参考文献
Chevron U.S.A. Inc.
Patent: US6339182 B1, 2002 ;
Location in patent: Table 1 ;
