80937-33-3合成路线 （共 1249 条）
反应条件
in neat (no solvent)
photochemical oxidation;;
参考文献
Gmelin Handbook: Si: MVol.B, 260, page 704 - 707
反应条件
in neat (no solvent)
passing of O2 with SiCl4 through a heated porcelaine tube at 900-970°C;; isolation of crystalline Si4O4Cl8 by fractional distn.;;
参考文献
Gmelin Handbook: Si: MVol.B, 260, page 704 - 707
反应条件
in neat (no solvent)
byproducts: Cl2; dry O2 atm.; boiling (57-150°C), heating (985°C); distn.;
参考文献
Binnewies; Jerzembeck; Wilkening
Zeitschrift fur Anorganische und Allgemeine Chemie, 1997 , vol. 623, # 12 p. 1875 - 1880
反应条件
in neat (no solvent)
byproducts: Si2OCl6, Si3O2Cl8, Si4O3Cl10; SiCl4 and O2 was passed through a quartz tube and heated at 955°; further products; condensed at 75°C; distn. of SiCl4 and Si2OCl6; distn. in vac.; fractionation in vac.; (29)Si NMR, elem. anal.;
参考文献
Marsmann, Heinrich C.; Meyer, Ehler
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1987 , vol. 548, p. 193 - 203
反应条件
in neat (no solvent)
byproducts: Cl2; reaction of gaseous SiCl4 and O2 at 955°C, products are condensed at 55°C; destillation, sublimation;
参考文献
Wannagat, Ulrich; Bogedain, Gabriele; Schervan, Adrian; Marsmann, Heinrich C.; Brauer, David J.; et al.
Zeitschrift fuer Naturforschung, B: Chemical Sciences, 1991 , vol. 46, # 7 p. 931 - 940
反应条件
catalyst: Au/ZSM-5 in gas
at 474 K;
参考文献
Salama, Tarek M.; Ohnishi, Ryuichiro; Ichikawa, Masaru
Chemical Communications, 1997 , # 1 p. 105 - 106
反应条件
in gas
Irradiation (UV/VIS); on photolysis (>= 300nm, 1min irradiation) of a Cl2-SiHCl3-air-mixture (0.5 Torr Cl2, 1.0 Torr SiHCl3, 700 Torr air);; not isolated, monitoring of react. by IR (assignment proved by isotope labeling with (18)O2);;
参考文献
Niki, H.; Maker, P. D.; Savage, C. M.; Breitenbach, L. P.; Hurley, M. D.
Journal of Physical Chemistry, 1985 , vol. 89, # 17 p. 3725 - 3729
反应条件
in gas
Irradiation (UV/VIS); on photolysis (>= 300nm, 1min irradiation) of a Cl2-SiHCl3-air-mixture (0.5 Torr Cl2, 1.0 Torr SiHCl3, 700 Torr air);; not isolated, monitoring of react. by IR;;
参考文献
Niki, H.; Maker, P. D.; Savage, C. M.; Breitenbach, L. P.; Hurley, M. D.
Journal of Physical Chemistry, 1985 , vol. 89, # 17 p. 3725 - 3729
反应条件
in solid matrix
Irradiation (UV/VIS); a gas mixt. of SiHCl3/O2/Ar at mole ratio 1/10/100 codeposited (1.7 mmol/h for 8-42 h) with excess Ar onto a 20 K Al mirror with simultaneous vac. UV irradiation from a 1216-Å hydrogen lamp, irradiation time about 20 h; detn. by IR spectroscopy;
参考文献
Shirk, Amy E.; Shirk, James S.
Journal of Molecular Spectroscopy, 1982 , vol. 92, p. 218 - 228
反应条件
in gas
Irradiation (UV/VIS); on photolysis (>= 300nm) of a Cl2-SiHCl3-N2-O2-mixture (0.2 Torr Cl2, 2Torr O2, 0.1 Torr SiHCl3, 700 Torr N2);; not isolated, monitoring of react. by IR;;
参考文献
Niki, H.; Maker, P. D.; Savage, C. M.; Breitenbach, L. P.; Hurley, M. D.
Journal of Physical Chemistry, 1985 , vol. 89, # 17 p. 3725 - 3729
