80937-33-3合成路线 （共 1249 条）
反应条件
in neat (no solvent)
careful oxidation of SiH4;; dioxo disiloxane as a compound of a solid residue;;
参考文献
Stock, A.; Somieski, C.
Ber., 1922 , vol. 55, p. 3961 - 3969
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Gmelin Handbook: Si: MVol.B, 211, page 585 - 587
反应条件
in neat (no solvent)
formation of a solid residue;;
参考文献
Gmelin Handbook: Si: MVol.B, 210, page 582 - 585
反应条件
in neat (no solvent)
careful oxidation of Si2H6;; dioxo disiloxane as a compound of a solid residue;;
参考文献
Stock, A.; Somieski, C.
Ber., 1922 , vol. 55, p. 3961 - 3969
Full Text Show Details
Gmelin Handbook: Si: MVol.B, 211, page 585 - 587
反应条件
in neat (no solvent)
formation of a solid residue;;
参考文献
Gmelin Handbook: Si: MVol.B, 210, page 582 - 585
反应条件
in cyclohexane
Irradiation (UV/VIS); Hg-arc lamp; 85 percent conversion was observed;
参考文献
Mochida, Kunio; Ohto, Junichi; Masuda, Matsuri; Nanjo, Masato; Arii, Hidekazu; Nakadaira, Yasuhiro
Chemistry Letters, 2008 , vol. 37, # 1 p. 20 - 21
反应条件
bromine in tetrachloromethane
Irradiation (UV/VIS); photochemical (436 nm) oxidn. with O2 sensitived by Br2, 0-14°C;
参考文献
Gmelin Handbook: C: MVol.D3, 2.4.2, page 110 - 112
反应条件
in gaseous matrix
in Ar-matrix, excess of oxygen, up to 400°C; deposition at 14 K for 20-24 h (2 mmol/h); IR spectroscopy;
参考文献
Ault, Bruce S.
Journal of Organometallic Chemistry, 1999 , vol. 572, # 2 p. 169 - 175
反应条件
copper dichloride in further solvent(s)
Kinetics;
参考文献
Dorfman; Ibraimova; Polimbetova
Russian Journal of Physical Chemistry A, 2002 , vol. 76, # 1 p. 50 - 55
反应条件
copper(II) oxide in gas
Kinetics; byproducts: acetaldehyde, water; chromy., counter measurement;
参考文献
Dobrynkin; Rogov; Ismagilov; Popovskii; Sazonov
Kinetics and Catalysis, 1985 , vol. 26, # 3 pt 2 p. 561 - 566
反应条件
copper(II) oxide in gas
Kinetics; byproducts: propionaldehyde, acetaldehyde, water; at 490-530°K; chromy., counter measurement;
参考文献
Dobrynkin; Rogov; Ismagilov; Popovskii; Sazonov
Kinetics and Catalysis, 1985 , vol. 26, # 3 pt 2 p. 561 - 566
