80937-33-3合成路线 （共 1249 条）
反应条件
in neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;;
参考文献
Gmelin Handbook: Si: MVol.B, 243, page 659 - 661
反应条件
in gas at 985°C; distd.;
参考文献
Gmelin Handbook: Si: MVol.B, 260, page 704 - 707
反应条件
in neat (no solvent)
参考文献
Gmelin Handbook: Si: MVol.B, 260, page 704 - 707
反应条件
in neat (no solvent) passing of O2 with SiCl4 through a heated porcelaine tube at 900-970°C;; isolation of crystalline Si4O4Cl8 by fractional distn.;;
参考文献
Gmelin Handbook: Si: MVol.B, 260, page 704 - 707
反应条件
in neat (no solvent) byproducts: Cl2; reaction of gaseous SiCl4 and O2 at 955°C, products are condensed at 55°C; destillation, sublimation;
参考文献
Zeitschrift fuer Naturforschung, B: Chemical Sciences, , vol. 46, # 7 p. 931 - 940
反应条件
sodium hydroxide; 3-isopropyl-1-(2-hydroperoxy-2-propyl)benzene in water T=90°C;
参考文献
Indspec Chemical Corporation
Patent: US6350921 B1, 2002 ;
Location in patent: Example 1 ;
反应条件
AgPd T=110°C; 2 h; Autoclave; Reagent/catalyst;
参考文献
Toshima, Naoki; Kawashima, Keisuke
Chemistry Letters, 2012 , vol. 41, # 10 p. 1171 - 1172
反应条件
FeOOH (seed) Penniman-Zoph process;
参考文献
Elementis Pigments, Inc.
Patent: US2003/223942 A1, 2003 ;
Location in patent: Page 2 ;
反应条件
in solid matrix byproducts: UO3, UO2((2+), UO2(1+); (Ar); codeposition of U and Ar diluted oxygen,(4-5h, 12K); not isolated, detected by IR spectroscopy;
参考文献
Hunt, Rodney D.; Andrews, Lester
Journal of Chemical Physics, 1993 , vol. 98, # 5 p. 3690 - 3696
反应条件
in gaseous matrix laser-ablated P was condensited with O2 (1percent) in excess argon onto a 10K CsI cryogenic window at 2 mmol/h for 1 h, annealed at 25 K and photolysed; not isolated, detn. by FTIR; further products;
参考文献
Bauschlicher Jr., Charles W.; Zhou, Mingfei; Andrews, Lester
Journal of Physical Chemistry A, 2000 , vol. 104, # 16 p. 3566 - 3571
