oxygen in neat (no solvent) Irradiation (UV/VIS); irradiation of a SiHCl3-O2 mixture by a hot or cold Hg arc;;

in gas Irradiation (UV/VIS); on photolysis (>= 300nm, 1min irradiation) of a Cl2-SiHCl3-air-mixture (0.5 Torr Cl2, 1.0 Torr SiHCl3, 700 Torr air);; not isolated, monitoring of react. by IR (assignment proved by isotope labeling with (18)O2);;

in gas Irradiation (UV/VIS); on photolysis (>= 300nm, 1min irradiation) of a Cl2-SiHCl3-air-mixture (0.5 Torr Cl2, 1.0 Torr SiHCl3, 700 Torr air);; not isolated, monitoring of react. by IR;;

in solid matrix Irradiation (UV/VIS); codeposition of SiHCl3/Ar and Ar/O3 (prepared from O2 by silent electric discharge), irradiation from a 1216-Å hydrogen lamp of the two spezies at 20 K or by simultaneous deposition (1.7 mmol/h for 8-42 h) and irradiation for about 20 h; detn. by IR spectroscopy;

in solid matrix Irradiation (UV/VIS); a gas mixt. of SiHCl3/O2/Ar at mole ratio 1/10/100 codeposited (1.7 mmol/h for 8-42 h) with excess Ar onto a 20 K Al mirror with simultaneous vac. UV irradiation from a 1216-Å hydrogen lamp, irradiation time about 20 h; detn. by IR spectroscopy;

in gas Irradiation (UV/VIS); on photolysis (>= 300nm) of a Cl2-SiHCl3-N2-O2-mixture (0.2 Torr Cl2, 2Torr O2, 0.1 Torr SiHCl3, 700 Torr N2);; not isolated, monitoring of react. by IR;;

in gas Irradiation (UV/VIS); not isolated, monitoring of react. by IR;;

in gas Irradiation (UV/VIS); on photolysis (>= 300nm, 1min irradiation) of a Cl2-SiHCl3-NO-N2-mixture;; not isolated, monitoring of react. by IR;;

in gas Kinetics; Irradiation (UV/VIS); investigation of kinetics of formation of SiCl3OCl and SiCl3OH: photolysis (>= 300nm) of a Cl2-SiHCl3-air-mixture in presence of DCl;; not isolated, monitoring of react. by IR;;