反应条件
CO in octane High Pressure; soln. of Os complex in octane placed in high-pressure app. and treated with CO 1600 psi/125 °C for 5 h; evapd. in vac., extd. with hexane (Os3(CO)12 insol. residue), chromd. (SiO2, hexane/CH2Cl2 90/10), Os3S2(CO)9 crystd. from hexane, Os4S(CO)13 crystd. from hexane/benzene 90/10;
参考文献
Organometallics, , vol. 2, p. 1301 - 1308