反应条件
1: 80 percent / 8.5percent NaOH / 45 °C 2: 75 percent / diethyl ether / 0 °C 3: 72 percent / SnCl2, HI, HCl / acetic acid 4: SOCl2 / benzene / Heating 5: 88 percent / benzene; diethyl ether 6: 3 percent / benzene / 9.5 h / Irradiation 7: SOCl2 / benzene / Heating 8: benzene; diethyl ether 9: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Ghosh, Somnath; Datta, Indira; Chakraborty, Rupak; Das, Tapas Kumar; Sengupta, Judhajit; Sarkar, Dipak Chandra
Tetrahedron, 1989 , vol. 45, # 5 p. 1441 - 1446
