7-(2-吗啉-4-基-乙氧基)-2-(4-硝基苯基)咪唑并[2,1-b][1,3]-苯并噻唑合成路线 (共 6 条)
反应条件
tetra-(n-butyl)ammonium iodide; potassium carbonate in N,N-dimethyl-formamide
T=90°C; 5 h;
参考文献
Bhagwat, Shripad; Chao, Qi; Grotzfeld, Robert M.; Patel, Hitesh K.; Sprankle, Kelly G.
Patent: US2007/232604 A1, 2007 ;
Location in patent: Page/Page column 39 ;
反应条件
tetra-(n-butyl)ammonium iodide; potassium carbonate in N,N-dimethyl-formamide
T=90 - 95°C; 5 h;
参考文献
AMBIT BIOSCIENCES CORP.; GROSS, Timothy, David; PRASAD, Achampeta, Rathan; CITINENI, Janakiram, Rao
Patent: WO2011/56939 A1, 2011 ;
Location in patent: Page/Page column 76-77 ;
反应条件
1: isopropyl alcohol / 24 h / Reflux
2: potassium carbonate / N,N-dimethyl-formamide / 48 h / 85 °C
View Scheme
参考文献
UNIVERSITE DE LA MEDITERRANEE AIX-MARSEILLE II; MAINA, Flavio; DONO, Rosanna; CAMBILLAU, Christian; PICCOLO, Oreste; PASSARELLA, Daniele; COLOMBO, Francesco; BOSCH, Joan; MAIGRET, Bernard; LEROUX, Vincent
Patent: WO2011/36303 A1, 2011 ;
WO 2011/036303 A1
反应条件
1: isopropyl alcohol / 24 h / Reflux
2: potassium carbonate / N,N-dimethyl-formamide / 48 h / 85 °C
View Scheme
参考文献
UNIVERSITE DE LA MEDITERRANEE AIX-MARSEILLE II; MAINA, Flavio; DONO, Rosanna; CAMBILLAU, Christian; PICCOLO, Oreste; PASSARELLA, Daniele; COLOMBO, Francesco; BOSCH, Joan; MAIGRET, Bernard; LEROUX, Vincent
Patent: WO2011/36303 A1, 2011 ;
WO 2011/036303 A1
反应条件
1.1: water; hydrogen bromide / 4 h / 105 - 110 °C / Industry scale
1.2: 0.5 h / 20 °C / pH 6.5 - 7 / Industry scale
2.1: sodium hydrogencarbonate / butan-1-ol / 110 - 115 °C / Industry scale
3.1: potassium carbonate; tetra-(n-butyl)ammonium iodide / N,N-dimethyl-formamide / 5 h / 90 - 95 °C / Industry scale
View Scheme
参考文献
AMBIT BIOSCIENCES CORP.; GROSS, Timothy, David; PRASAD, Achampeta, Rathan; CITINENI, Janakiram, Rao
Patent: WO2011/56939 A1, 2011 ;
反应条件
hydrogen; Raney nickel in tetrahydrofuran; methanol
P=7757.43 Torr; 24 h;
参考文献
AMBIT BIOSCIENCES CORP.; GROSS, Timothy, David; PRASAD, Achampeta, Rathan; CITINENI, Janakiram, Rao
Patent: WO2011/56939 A1, 2011 ;
Location in patent: Page/Page column 81-82 ;