benzene in neat (no solvent) HSiCl3 and benzene with a boron halide as catalyst below 300°C under pressure; repeated react. of the residue of distn. with HSiCl3 and C6H6;;
参考文献
Gmelin Handbook: Si: MVol.C, 43, page 128 - 130
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General Electric Co.
Patent: US2600198 , 1952 ;
C. A., 1953 , p. 1736