triethylamine in benzene
byproducts: Et3N*HCl; dropwise addn. of mixt. of Si-compd. and Et3N to GeCl4 soln., stirring (24 h, 20°C), heating to 80°C for 30 min (Et3N*HCl removal); distn.; elem. anal.;
参考文献
Riviere-Baudet, Monique; Khallaayoun, Abdelhay; Ahra, Mohamed
Phosphorus, Sulfur and Silicon and the Related Elements, 1993 , vol. 81, # 1-4 p. 95 - 100
