反应条件
in gas reactor temp.: 250 - 500°C, passing SiCl4 over Mg2Si with N2 as carrier gas, condensing exit gases with liq. N2 traps; detn. by gas chromy., cooling reator tube to room temp., deposition of Si;
参考文献
Mulla, I. S.; Choube, A. C.; Dongare, M. K.; Sinha, A. P. B.
Indian Journal of Chemistry, Section A: Inorganic, Physical, Theoretical & Analytical, 1988 , vol. 27, # 9 p. 756 - 758
