in gas Al(CH3) injected into ALD reactor with 50 sccm Ar carrier flow rate and O3 flow rate of 600 sccm; deposited on Si(100) wafers at pulse and purgetimes for 40, 60, 70 and 100 ALD cycles at suspector temp. of 320.degre e.C at pressures 200-1000 mTorr;
参考文献
Liu, Han; Ye, Peide D.
Applied Physics Letters, 2011 , vol. 99, # 5 art. no. 052108
