in gaseous matrix gas-phase react. of NO2/ Ar deposited on a cold CsI window with O3/ Ar (deposition rates of O3: 0.09 to less than 0.27 mmol/ h); not isolated, detected by IR spectroscopy;;
参考文献
Morris, V. R.; Bhatia, S. C.; Hall, John H.
Journal of Physical Chemistry, 1987 , vol. 91, # 12 p. 3359 - 3361
in gaseous matrix byproducts: NO; silicon evaporated at temp. between 1600-2050°C, Si vapor directly reacted with NO2 in the pressure range E-5 to E-3 Torr (single and multiple collision condns.); not isolated, identified by chemiluminescence;
参考文献
Woodward, R.; Hayden, J. S.; Gole, J. L.
Chemical Physics, 1985 , vol. 100, p. 153 - 170
in neat (no solvent) slowly passing NO2 into PCl3 (cooled with ice and NaCl) with evolution of NOCl (NO2 can be dried with CaCl2 or P2O5);; fractionation between 105 and 110°C yields PCl3 and P2O3Cl4 between 200 and 230°C, repeated distillation yields pure P2O3Cl4 at 210 to 215°C, fractionation can also be performed in vacuum or high vacuum;;
