反应条件
drying at 773 K, exposure to SiCl4 at 473 K, passing through N2-flow, exposure to humid air at 473-773 K, heating at 473 K, repeating 6 times, grinding with SiO2 for 12 h, heating at 1520, 1570, and 1620 K, for 1 and3 h; detd. by X-ray diffraction;
参考文献
Gusarov; Ishutina; Malkov; Malygin
Inorganic Materials, 1999 , vol. 35, # 12 p. 1261 - 1266
