N-CBZ-L-天冬氨酸合成路线 （共 76 条）
反应条件
1: 33.2 g / 1N HCl / Ambient temperature 2: 11.9 g / NaBH4 / tetrahydrofuran; methanol / 45 - 55 °C 3: 16.9 g / Et3N / ethyl acetate / 1 h / -20 - -5 °C View Scheme
参考文献
Tomori, Hiroshi; Shibutani, Kuniko; Ogura, Katsuyuki
Heterocycles, 1997 , vol. 44, # 1 p. 213 - 225
反应条件
(i) HClO4, (ii) H2, Pd-C, EtOH; Multistep reaction;
参考文献
Taschner,E. et al.
Justus Liebigs Annalen der Chemie, 1961 , vol. 646, p. 127 - 133
反应条件
1: 33.2 g / 1N HCl / Ambient temperature 2: 11.9 g / NaBH4 / tetrahydrofuran; methanol / 45 - 55 °C 3: 16.9 g / Et3N / ethyl acetate / 1 h / -20 - -5 °C 4: 2.60 g / 3 h / 40 °C 5: 92 percent / AcOH / 10percent Pd/C / H2O / 1.5 h / 100 °C View Scheme
参考文献
Tomori, Hiroshi; Shibutani, Kuniko; Ogura, Katsuyuki
Heterocycles, 1997 , vol. 44, # 1 p. 213 - 225
反应条件
1: toluene 2: aqueous dioxane; aqueous NaOH 3: liquid NH3 View Scheme
参考文献
Berger; Katchalski
Journal of the American Chemical Society, 1951 , vol. 73, p. 4084,4087
反应条件
toluene-4-sulfonic acid in benzene 1 h; Heating;
参考文献
Scholtz, John M.; Bartlett, Paul A.
Synthesis, 1989 , # 7 p. 542 - 544
反应条件
1: in benzene 3 h; Heating / reflux; 2: With sodium hydrogencarbonate in water; benzene 3: With hydrogenchloride in water; benzene
参考文献
PELLICCIARI, Roberto; SCHWARCZ, Robert; GUIDETTI, Paolo
Patent: WO2006/13085 A1, 2006 ;
Location in patent: Page/Page column 4-5 ;
WO 2006/013085 A1
反应条件
toluene-4-sulfonic acid in toluene 1.66667 h; Heating;
参考文献
Baldwin, Jack E.; Lee, E.
Tetrahedron, 1986 , vol. 42, # 23 p. 6551 - 6554
反应条件
1: With boron trifluoride diethyl etherate
T=20°C; 8.75 h;
2: With sodium hydroxide in water
T=23 - 30°C; pH=10.37;
参考文献
Allen, David Robert; Kyung-Lee, Seung-Hee
Patent: US2003/236430 A1, 2003 ;
Location in patent: Page 3 ;
反应条件
sulfuric acid
T=20°C; 5.5 h; Product distribution / selectivity;
参考文献
Allen, David Robert; Kyung-Lee, Seung-Hee
Patent: US2003/236430 A1, 2003 ;
Location in patent: Page 3 ;
反应条件
boron trifluoride diethyl etherate
T=20°C; 5 h; Product distribution / selectivity;
参考文献
Allen, David Robert; Kyung-Lee, Seung-Hee
Patent: US2003/236430 A1, 2003 ;
Location in patent: Page column 4 ;
