3-甲基-CBS-氧硼啶合成路线 (共 731 条)
反应条件
1: 85 percent / tetrahydrofuran / 20 h / 20 °C
2: 100 percent / DDQ / toluene / 1 h / 20 °C
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参考文献
Alphonse, France-Aimee; Suzenet, Franck; Keromnes, Anne; Lebret, Bruno; Guillaumet, Gerald
Synthesis, 2004 , # 17 p. 2893 - 2899
反应条件
in diethyl ether
Sn-compound dissolved in Et2O, added dropwise to the organic compound, refluxed for 1 h; hydrolyzed with ice, organic layer dried over MgSO4, solvent evapd., residue chromd. (SiO2, benzene);
参考文献
Gielen, M.; Molenberghs, L.; Eynde, I. Vanden
Bulletin des Societes Chimiques Belges, 1981 , vol. 90, # 2 p. 177 - 184
参考文献
Ginsburg; Pappo
Journal of the Chemical Society, 1951 , p. 516,517
反应条件
in tetrahydrofuran
T=25°C;
参考文献
Cardellicchio, Cosimo; Fiandanese, Vito; Naso, Francesco; Pietrusiewicz, K. Michal; Wisniewski, Witold
Tetrahedron Letters, 1993 , vol. 34, # 19 p. 3135 - 3138
反应条件
in tetrahydrofuran
T=20°C; Substitution; 15 h;
参考文献
Cardellicchio, Cosimo; Fracchiolla, Giuseppe; Naso, Francesco; Tortorella, Paolo; Holody, Wieslawa; Michal Pietrusiewicz
Tetrahedron Letters, 1999 , vol. 40, # 31 p. 5773 - 5776
反应条件
1-iodo-2,2-dimethylpropane; ethylmagnesium bromide in tetrahydrofuran
T=25°C; Substitution; 5 h;
参考文献
Inoue, Atsushi; Shinokubo, Hiroshi; Oshima, Koichiro
Synlett, 1999 , # 10 p. 1582 - 1584
反应条件
anhydrous iron chloride; copper(I) thiophene-2-carboxylate in tetrahydrofuran
T=-20 - 20°C; 2 h; Inert atmosphere;
参考文献
Hamze, Abdallah; Brion, Jean-Daniel; Alami, Mouad
Organic Letters, 2012 , vol. 14, # 11 p. 2782 - 2785
反应条件
toluene-4-sulfonic acid in tetrahydrofuran; methylene chloride-hexane; water; toluene
参考文献
Hoffman-La Roche Inc.
Patent: US4927838 A1, 1990 ;
反应条件
diethyl ether; benzene
Erhitzen des nach der Hydrolyse erhaltenen Reaktionsprodukts mit KHSO4 auf 160grad;
参考文献
Bergmann; Szmuszkowicz; Fawaz
Journal of the American Chemical Society, 1947 , vol. 69, p. 1773,1776
反应条件
in tetrahydrofuran
T=5 - 23°C; Grignard reaction; 2 h;
参考文献
Bradley, David A.; Godfrey, Alexander G.; Schmid, Christopher R.
Tetrahedron Letters, 1999 , vol. 40, # 28 p. 5155 - 5159