1,1-二甲基硅杂环丁烷 二甲基三亚甲基硅烷合成路线 （共 97 条）
反应条件
sulphur(VI) hexafluoride
Irradiation; Product distributionKinetics;
参考文献
Frey, Henry M.; Kashoulis, Annoula; Ling, Lee Mei; Lodge, Susan P.; Pidgeon, Ivy M.; Walsh, Robin
Journal of the Chemical Society, Chemical Communications, 1981 , # 17 p. 915 - 917
反应条件
sulphur(VI) hexafluoride
Irradiation; Product distribution;
参考文献
Frey, Henry M.; Kashoulis, Annoula; Ling, Lee Mei; Lodge, Susan P.; Pidgeon, Ivy M.; Walsh, Robin
Journal of the Chemical Society, Chemical Communications, 1981 , # 17 p. 915 - 917
反应条件
T=560°C; and their hydrolysates; other substituted cyclosilthianes; reaction in the stream of helium; Product distribution;
参考文献
Gusel'Nikov, L. E.; Volkova, V. V.; Avakyan, V. G.; Volnina, E. A.; Zaikin, V. G.; et al.
Journal of Organometallic Chemistry, 1984 , vol. 271, # 1-3 p. 191 - 206
反应条件
sulphur(VI) hexafluoride
Irradiationother monomers; Product distribution;
参考文献
Pola, Josef; Cukanova, Dana; Minarik, Milan; Lycka, Antonin; Tlaskal, Jaroslav
Journal of Organometallic Chemistry, 1992 , vol. 426, # 1 p. 23 - 34
反应条件
P=1 Torr; Ambient temperatureIrradiationvariation of wavelengths, temperature, gases/pressures; Product distribution;
参考文献
Brix, Th.; Arthur, N. L.; Potzinger, P.
Journal of Physical Chemistry, 1989 , vol. 93, # 25 p. 8193 - 8197
反应条件
T=600°C; Further byproducts given;
参考文献
Conlin,R.T.; Huffaker,H.B.; Kwak,Y.W.
Journal of the American Chemical Society, 1985 , vol. 107, p. 731
反应条件
T=600°C; Further byproducts given;
参考文献
Conlin,R.T.; Huffaker,H.B.; Kwak,Y.W.
Journal of the American Chemical Society, 1985 , vol. 107, p. 731
反应条件
T=670°C; Further byproducts given;
参考文献
Conlin,R.T.; Huffaker,H.B.; Kwak,Y.W.
Journal of the American Chemical Society, 1985 , vol. 107, p. 731
反应条件
T=600°C; further temperature; Product distribution;
参考文献
Conlin,R.T.; Huffaker,H.B.; Kwak,Y.W.
Journal of the American Chemical Society, 1985 , vol. 107, p. 731
反应条件
tungsten
P=5E-06 Torr; Gas phaseHeating; Activation energy;
参考文献
Tong; Shi
Journal of Mass Spectrometry, 2010 , vol. 45, # 2 p. 215 - 222
