反应条件
H2 in neat (no solvent) chemical vapour deposition of CH4 (4.0 molpercent), H2 and SiH4 (2.0 molpercent) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;
参考文献
Chen; Goto; Hirai
Journal of Materials Science, 1989 , vol. 24, # 11 p. 3824 - 3830