(氯亚甲基)二甲基氯化铵合成路线 （共 84 条）
反应条件
in dichloromethane T=70°C;
参考文献
MERCK and CO., INC.
Patent: WO2006/74281 A2, 2006 ;
Location in patent: Page/Page column 42 ;
WO 2006/074281 A2
反应条件
in 1,2-dichloro-ethane 3 h; Heating / reflux;
参考文献
Wallace, Eli; Topolov, George; Zhao, Qian; Lyssikatos, Joseph P.
Patent: US2005/101617 A1, 2005 ;
Location in patent: Page/Page column 11 ;
反应条件
1: in N,N-dimethyl-formamide T=20°C; 2: With water in N,N-dimethyl-formamide T=20°C; 3: With sodium hydroxide in N,N-dimethyl-formamide T=20°C;
参考文献
AMGEN INC.; BROWN, Matthew; CHEN, Yi; CUSHING, Timothy D.; GONZALEZ LOPEZ DE TURISO, Felix; HE, Xiao; KOHN, Todd J.; LOHMAN, Julia Winslow; PATTAROPONG, Vatee; SEGANISH, Jennifer; SHIN, Youngsook; SIMARD, Jillian L.
Patent: WO2010/151737 A2, 2010 ;
Location in patent: Page/Page column 142 ;
WO 2010/151737 A2
反应条件
Vilsmeier formylation;
参考文献
Bandgar, Babasaheb P.; Hote, Baliram S.; Nile, Shivraj H.
Letters in Drug Design and Discovery, 2011 , vol. 8, # 8 p. 725 - 732
反应条件
sodium hydroxide
1) DMF, 20 deg C, 18 h; Yield given. Multistep reaction. Yields of byproduct given;
参考文献
Downie, Ian M.; Earle, Martyn J.; Heaney, Harry; Shuhaibar, Khamis F.
Tetrahedron, 1993 , vol. 49, # 19 p. 4015 - 4034
反应条件
1: in N,N-dimethyl-formamide
T=0°C; 1.5 h;
2: With sodium hydroxide in dichloromethane; water; N,N-dimethyl-formamide
T=0°C; 0.333333 h;
参考文献
North Carolina State University
Patent: US2008/221319 A1, 2008 ;
Location in patent: Page/Page column 12; 14 ;
参考文献
Gross,H. et al.
Journal fuer Praktische Chemie (Leipzig), 1969 , vol. 311, p. 577 - 585
参考文献
Degenhardt, Charles R.
Synthetic Communications, 1982 , vol. 12, # 6 p. 415 - 422
反应条件
in acetonitrile
T=-10°C;
参考文献
Dulcere, Jean-Pierre
Tetrahedron Letters, 1981 , vol. 22, # 17 p. 1599 - 1600
反应条件
1: 2-formyl-3-o-tolyl-acrylonitrile; 1-carbamoylmethylpyridinium chloride With triethylamine in methanol
T=20 - 30°C; 2 h;
2: N-(chloromethylene)-N-methylmethanaminium chloride in dichloromethane
T=45 - 190°C; 1.25 h;
参考文献
Goehring, Wolfgang; Harrington, Peter John; Hodges, Lewis M.; Johnston, David A.; Rimmler, Goesta
Patent: US2005/14792 A1, 2005 ;
Location in patent: Page column 7 ;
US 20050014792 A1
