in pentane Irradiation (UV/VIS); photolysis (medium-pressure Hg lamp, 300 min);

in pentane Irradiation (UV/VIS); photolysis (medium-pressure Hg lamp, 60 min);

in pentane Irradiation (UV/VIS); photolysis (254 nm);

tert.-butyl lithium in tetrahydrofuran; pentane Ar atmosphere; cooling soln. of t-BuLi in pentane and THF (-80°C), addn. of Sn-compd., stirring (60 min, -80°C), quenching with Me3GeCl; hydrolysation (aq. NH4Cl), diln. (Et2O), sepn. of org. layer, washing (H2O), drying (MgSO4), evapn.;

tert.-butyl lithium in tetrahydrofuran; pentane Ar atmosphere; cooling soln. of t-BuLi in pentane and THF (-80°C), addn. of Sn-compd., stirring (60 min, -80°C), quenching with Me3GeCl; hydrolysation (aq. NH4Cl), diln. (Et2O), sepn. of org. layer, washing (H2O), drying (MgSO4), evapn.;

tert.-butyl lithium in tetrahydrofuran; pentane Ar atmosphere; cooling soln. of t-BuLi in pentane and THF (-80°C), addn. of Sn-compd., stirring (60 min, -80°C), quenching with Me3GeCl; hydrolysation (aq. NH4Cl), diln. (Et2O), sepn. of org. layer, washing (H2O), drying (MgSO4), evapn.;

Mg; NH4Cl in tetrahydrofuran using high-vac. techniques; mixt. of C6H4(Br)(CH2SnMe3), Mg in THF stirred at 60°C; after 24 h Me3GeCl added; Et2O and satd. NH4Cl added; org. fraction sepd.; aq. fraction extd. (Et2O); org. fractions combined; dried (MgSO4); filtered; evapd. to dryness;analyzed by NMR; isolated by chromy.;

n-butyllithium in tetrahydrofuran; hexane Ar atmosphere; cooling soln. of n-BuLi in hexane and THF (-70°C), addn. of Sn-compd. (ratio n-BuLi/Sn-compd. 3:1), stirring (60 min, -70°C), quenching with Me3GeCl, stirring (15 min); hydrolysation (aq. NH4Cl), diln. (Et2O), sepn. of org. layer, washing (H2O), drying (MgSO4), evapn.; elem. anal.;

n-butyllithium in diethyl ether; hexane Ar atmosphere; cooling soln. of n-BuLi in hexane and Et2O (-70°C), addn. of Sn-compd. and HMPT (ratio n-BuLi/Sn-compd. 1:1), stirring (30 min, -70°C), quenching with Me3GeCl, stirring (15 min); hydrolysation (aq. NH4Cl), diln. (Et2O), sepn. of org. layer, washing (H2O), drying (MgSO4), evapn.; elem. anal.;

n-butyllithium in diethyl ether; hexane Ar atmosphere; cooling soln. of n-BuLi in hexane and Et2O (-70°C), addn. of Sn-compd. (ratio n-BuLi/Sn-compd. 3:1), stirring (60 min, -70°C), warming (room temp., 60 min), quenching with Me3GeCl, stirring (15 min); hydrolysation (aq. NH4Cl), diln. (Et2O), sepn. of org. layer, washing (H2O), drying (MgSO4), evapn.; elem. anal.;