1-溴-4-(三甲基硅基)苯合成路线 （共 43 条）
反应条件
1: 1.) Mg, I2, 2.) dichloro<1,3-bis(diphenylphosphino)propane>nickel(II) / 1.) Et2O, reflux, 3 h, 2.) Et2O, reflux, 2 d 2: 94 percent / ICl / CH2Cl2 / 0.67 h / Ambient temperature 3: 1.) BuLi / 1.) hexane, Et2O, -70 deg C, 1 h, 2.) hexane, Et2O, 20 deg C, 8 h 4: 94 percent / LiAlH4 / tetrahydrofuran / 3 h / Heating View Scheme
参考文献
Frahn; Schluter
Synthesis, 1997 , # 11 p. 1301 - 1304
反应条件
1: 4-(trimethylsilyl)bromobenzene in N,N-dimethyl-formamide 0.5 h; Inert atmosphere; 2: 4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl-4',4',5',5'-tetramethyl-1,3,2-dioxaborolane With (1,1'-bis(diphenylphosphino)ferrocene)palladium(II) dichloride; potassium acetate in N,N-dimethyl-formamide T=80°C; 18 h; Inert atmosphere;
参考文献
Schubert, Christina; Wielopolski, Mateusz; Mewes, Lars-Hendrik; De Miguel Rojas, Gustavo; Van Der Pol, Cornelia; Moss, Kathryn C.; Bryce, Martin R.; Moser, Jacques E.; Clark, Timothy; Guldi, Dirk M.
Chemistry - A European Journal, 2013 , vol. 19, # 23 p. 7575 - 7586
反应条件
1: 4-(trimethylsilyl)bromobenzene With n-butyllithium in tetrahydrofuran; hexane T=-80°C; 0.25 h; Inert atmosphere; 2: 2-isopropoxy-4,4,5,5-tetramethyl-1,3,2-dioxaborolane in tetrahydrofuran; hexane T=20°C;
参考文献
Sakamoto, Youichi; Suzuki, Toshiyasu
Journal of the American Chemical Society, 2013 , vol. 135, # 38 p. 14074 - 14077
反应条件
hydroxide T=24.9°C; P=0.4 Torr; ΔH(acid); Thermodynamic dataProduct distribution;
参考文献
Wenthold; Squires
Journal of Mass Spectrometry, 1995 , vol. 30, # 1 p. 17 - 24
反应条件
1: p-bromophenyl bromide With n-butyllithium in diethyl ether; hexane
T=-78°C; 4 h;
2: chloro-trimethyl-silane in diethyl ether; hexane
T=-78 - 20°C; 2.16667 h;
参考文献
Itami, Kenichiro; Terakawa, Koji; Yoshida, Jun-ichi; Kajimoto, Okitsugu
Journal of the American Chemical Society, 2003 , vol. 125, # 20 p. 6058 - 6059
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Itami, Kenichiro; Terakawa, Koji; Yoshida, Jun-Ichi; Kajimoto, Okitsugu
Bulletin of the Chemical Society of Japan, 2004 , vol. 77, # 11 p. 2071 - 2080
反应条件
n-butyllithium; magnesium sulfate in water
参考文献
LG DISPLAY CO., LTD.
Patent: US2010/155714 A1, 2010 ;
反应条件
1: 4-bromo-1-iodobenzene With tert.-butyl lithium in hexane; pentane
T=0°C; Metallation; 1 h;
2: chloro-trimethyl-silane in tetrahydrofuran; Petroleum ether
T=20°C; silylation; Further stages.;
参考文献
Richter; De Wolf; Van Koten; Deelman
Journal of Organic Chemistry, 2000 , vol. 65, # 13 p. 3885 - 3893
反应条件
n-butyllithium
dann mit Chlor-trimethyl-silan;
参考文献
Gilman et al.
Journal of the American Chemical Society, 1954 , vol. 76, p. 3219
反应条件
in diethyl ether
Ambient temperature;
参考文献
Walree, Cornelis A. van; Lauteslager, Xavier Y.; Wageningen, Andreas M. A. van; Zwikker, Jan W.; Jenneskens, Leonardus W.
Journal of Organometallic Chemistry, 1995 , vol. 496, # 1 p. 117 - 126
参考文献
Burkhard
Journal of the American Chemical Society, 1946 , vol. 68, p. 2103
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Soffer; De Vries
Journal of the American Chemical Society, 1951 , vol. 73, p. 5817
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Gmelin Handbook: Si: MVol.C, 22, page 68 - 71
