反应条件
hydrogen in gaseous matrix r. f. thermal plasma chemical vapour deposition (Ar carrier gas, Mo or Si substrate, substrate temp. 430-1100°C, deposition time 5 -10 min); secondary electron microscopy, X-ray diffraction;
参考文献
Prouhet, S.; Langlais, F.; Guette, A.; Naslain, R.; Rey, J.
European Journal of Solid State and Inorganic Chemistry, 1993 , vol. 30, p. 953 - 970
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Prouhet, S.; Vignoles, G.; Langlais, F.; Guette, A.; Naslain, R.
European Journal of Solid State and Inorganic Chemistry, 1993 , vol. 30, p. 971 - 990