反应条件
hydrogen in neat (no solvent) metal-org. chem. vapor deposition, nitrided (1050°C for 3 min) c-plane (0001) sapphire as substrate, H2 and N2 were used togetehr with Me3In, 500 °C for 1 h; dipping in HCl to eliminate metallic indium;
参考文献
Kang, Ting-Ting; Liu, Xianglin; Zhang, Ri Q.; Hu, Wei G.; Cong, Guangwei; Zhao, Feng-Ai; Zhu, Qinsheng
Applied Physics Letters, 2006 , vol. 89, # 7 art. no. 071113
