反应条件
in neat (no solvent, gas phase)
other Radiation; plasma generated under microwaves in apparatus contained needle valves; in dynamic vac. (p(N2)=p(SiCl4)=100 Pa); for 20 h; condensation in cold traps; main products: N(SiCl3)3 and Cl3SiN(SiCl2)2NSiCl3, only small amounts of N2(SiCl3)4; detn. by GC;
参考文献
Schiefenhoevel, Nils; Himmel, Hans-Joerg; Binnewies, Michael
Angewandte Chemie, International Edition, 2003 , vol. 42, p. 5955 - 5957
Angewandte Chemie, 2003 , vol. 115, p. 6138 - 6139